isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.7mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.7mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220

1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction l

NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56 package

NextPower 100 V, 9 m廓 N-channel MOSFET in LFPAK56package

文件：298.69 Kbytes Page：15 Pages

包装：卷带（TR） 描述：PSMN8R7-100YSF/SOT669/LFPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

NextPower 100 V, 9 m廓 N-channel MOSFET in LFPAK56package

文件：298.69 Kbytes Page：15 Pages

N-channel 80 V 8.7 m廓 standard level MOSFET in D2PAK

文件：976.17 Kbytes Page：14 Pages

N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK

N-channel 80 V 8.7 m廓 standard level MOSFET in D2PAK

文件：231.4 Kbytes Page：14 Pages

N-channel 80 V 8.7 m廓 standard level MOSFET in TO-220

N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220