NextPower 100 V, 5.6 mOhm N-channel MOSFET in LFPAK56 package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • Low QG × RDSon FOM for high efficiency switching applications •

N-channel LFPAK 60 V, 5.2 mΩ standard level FET

1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha

Power MOSFETs

N-channel LFPAK 60 V, 5.2 mΩ standard level FET

N-channel LFPAK 60 V, 5.2 m廓 standard level FET

30 AMP EPION II HIGH SPEED RECTIFIER 50-150 VOLTS

FEATURES ● RADIATION TOLERANT ● ULTRA FAST RECOVERY 50 NSEC MAX ● REVERSE VOLTAGE UP TO 150 VOLTS ● VERY LOW FORWARD VOLTAGE DROP 450 MV AVERAGE ● LOW REVERSE LEAKAGE ● HERMETICALLY SEALED ● SINGLE CHIP CONSTRUCTION ● 200°C OPERATING

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

30 AMP EPION II HIGH SPEED RECTIFIER 50-150 VOLTS

FEATURES ● RADIATION TOLERANT ● ULTRA FAST RECOVERY 50 NSEC MAX ● REVERSE VOLTAGE UP TO 150 VOLTS ● VERY LOW FORWARD VOLTAGE DROP 450 MV AVERAGE ● LOW REVERSE LEAKAGE ● HERMETICALLY SEALED ● SINGLE CHIP CONSTRUCTION ● 200°C OPERATING

LED LIGHT BAR & BAR GRAPH ARRAYS

[Yellow Stone corp.] LED LIGHT BAR & BAR GRAPH ARRAYS

Electric Double Layer Capacitors/NF

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