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PSMN5R0价格
参考价格：￥10.8172
型号：PSMN5R0-100ES,127 品牌：NXP 备注：这里有PSMN5R0多少钱，2025年最近7天走势，今日出价，今日竞价，PSMN5R0批发/采购报价，PSMN5R0行情走势销售排行榜，PSMN5R0报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 |   | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-channel 100 V 5 mΩ standard level MOSFET in I2PAK 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction | NEXPERIA 安世 | | ||
N-channel 100 V 5 mΩ standard level MOSFET in TO-220 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conductio | NEXPERIA 安世 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) | ETC 知名厂家 | ETC | | |
NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) | ETC 知名厂家 | ETC | | |
N-channel 30 V 5 mΩ logic level MOSFET in LFPAK 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low swi | NEXPERIA 安世 | | ||
N-channel 40 V, 5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology 1. General description 85 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • Avala | NEXPERIA 安世 | | ||
N-channel 40 V, 5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology 1. General description 85 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • Av | NEXPERIA 安世 | | ||
N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction | NEXPERIA 安世 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.1mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.1mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-channel 80 V 4.7 mΩ standard level MOSFET 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction lo | NEXPERIA 安世 | | ||
N-channel 100 V 5 m廓 standard level MOSFET in I2PAK 文件：203.2 Kbytes Page：15 Pages | Philips 飞利浦 | | ||
PSMN5R0-100ES - N-channel 100 V 5 mΩ standard level MOSFET in I2PAK | NEXPERIA 安世 | | ||
N-channel 100 V 5 m廓 standard level MOSFET in I2PAK 文件：203.2 Kbytes Page：15 Pages | Philips 飞利浦 | | ||
N-channel 100 V 5 mΩ standard level MOSFET in TO-220 | NEXPERIA 安世 | | ||
N-channel 100 V 5 m廓 standard level MOSFET in TO-220 文件：208.73 Kbytes Page：15 Pages | Philips 飞利浦 | | ||
N-channel 100 V 5 m廓 standard level MOSFET in TO-220 文件：208.73 Kbytes Page：15 Pages | Philips 飞利浦 | | ||
N-channel 100V 5 m廓 standard level MOSFET in TO220F (SOT186A) 文件：362.7 Kbytes Page：16 Pages | NEXPERIA 安世 | | ||
N-channel 100V 5 mΩ standard level MOSFET in TO220F (SOT186A) | NEXPERIA 安世 | | ||
NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) 文件：1.8032 Mbytes Page：8 Pages | Philips 飞利浦 | | ||
NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) 文件：1.8032 Mbytes Page：8 Pages | Philips 飞利浦 | | ||
N-channel TrenchMOS logic level FET | ETC 知名厂家 | ETC | | |
N-channel TrenchMOS logic level FET | ETC 知名厂家 | ETC | | |
N-channel TrenchMOS logic level FET | ETC 知名厂家 | ETC | | |
N-channel 80 V, 5.1 m廓 standard level MOSFET in D2PAK | ETC 知名厂家 | ETC | | |
N-channel 80 V 4.7 m廓 standard level MOSFET | ETC 知名厂家 | ETC | | |
SMD Power Inductors Shielded SMD Power Inductors Shielded | PREMO 普莱默 | | ||
SMD Power Inductors Shielded SMD Power Inductors Shielded | PREMO 普莱默 | | ||
Flat Coils - Radial 文件：205.3 Kbytes Page：1 Pages | CT Central Technologies | | ||
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR ARRAYS 文件：107.1 Kbytes Page：4 Pages | TAITRON | | ||
Miniature Molded Wirewound 文件：119.01 Kbytes Page：1 Pages | OHMITE | |
PSMN5R0产品属性
- 类型
描述
- 型号
PSMN5R0
- 制造商
NXP Semiconductors
- 功能描述
MOSFET N CH 100V 120A SOT226
- 制造商
NXP Semiconductors
- 功能描述
MOSFET, N CH, 100V, 120A, SOT226
- 制造商
NXP Semiconductors
- 功能描述
MOSFET, N CH, 100V, 120A, SOT226; Transistor
- Polarity
N Channel; Continuous Drain Current
- Id
120A; Drain Source Voltage
- Vds
100V; On Resistance
- Rds(on)
0.0043ohm; Rds(on) Test Voltage
- Vgs
10V; Threshold Voltage Vgs
- Typ
3V ;RoHS
- Compliant
Yes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
22+ |
I2PAK |
22183 |
||||
恩XP |
23+ |
2PAK |
89630 |
当天发货全新原装现货 |
|||
恩XP |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
恩XP |
24+ |
NA/ |
3270 |
原厂直销,现货供应,账期支持! |
|||
恩XP |
24+ |
- |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
恩XP |
25+ |
TSSOP |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
ADI |
23+ |
TO220 |
8000 |
只做原装现货 |
|||
ADI |
23+ |
TO220 |
7000 |
||||
Nexperia(安世) |
2447 |
SOT226 |
115000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
恩XP |
21+ |
6000 |
只做原装正品,卖元器件不赚钱交个朋友 |
PSMN5R0芯片相关品牌
PSMN5R0规格书下载地址
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