型号 功能描述 生产厂家 企业 LOGO 操作
PSMN4R8-100PSE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

PSMN4R8-100PSE

N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PSMN4R8-100PSE

N-channel 100 V 5 m廓 standard level MOSFET with improved SOA in TO220 package

文件:791.63 Kbytes Page:13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

N-channel 100 V 5 m廓 standard level MOSFET with improved SOA in TO220 package

文件:261.11 Kbytes Page:13 Pages

Philips

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

ISC

无锡固电

N-channel 100 V 4.8 m廓 standard level MOSFET in D2PAK

文件:789.49 Kbytes Page:13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

更新时间:2025-10-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEXPERIA/安世
24+
NA/
6000
原厂直销,现货供应,账期支持!
NEXPERIA/安世
16+
TO-220
880000
明嘉莱只做原装正品现货
恩XP
24+
TO-220
5000
全新原装正品,现货销售
恩XP
23+
TO-220
20000
恩XP
原厂封装
9800
原装进口公司现货假一赔百
恩XP
23+
TO-220
6000
原装正品,支持实单
ADI
23+
TO-220
8000
只做原装现货
ADI
23+
TO-220
7000
Nexperia(安世)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
恩XP
25+
TO-220
32360
NXP/恩智浦全新特价PSMN4R8-100PSEQ即刻询购立享优惠#长期有货

PSMN4R8-100PSE数据表相关新闻