N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK

1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220

1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conductio

N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK

1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction loss

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.1mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.1mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel 30 V 4.3 mΩ logic level MOSFET

1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losse

N-channel 40 V, 4.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 95 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • Avala

N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 95 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • Av

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction loss

N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220

1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction loss

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel 100 V 4.3 m廓 standard level MOSFET in I2PAK

文件：195.82 Kbytes Page：14 Pages

N-channel 100 V 4.3 m廓 standard level MOSFET in I2PAK

文件：195.82 Kbytes Page：14 Pages

N-channel 100 V 4.3 m廓 standard level MOSFET in TO-220

文件：202.65 Kbytes Page：15 Pages

N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220

N-channel 100 V 4.3 m廓 standard level MOSFET in TO-220

文件：202.65 Kbytes Page：15 Pages

N-channel 30 V 4.1 m廓 logic level MOSFET in D2PAK

N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK

N-channel 30 V 4.3 mΩ logic level MOSFET

N-channel 30 V 4.3 m廓 logic level MOSFET

N-channel 80 V, 4.3 m廓 standard level MOSFET in I2PAK

文件：240.24 Kbytes Page：15 Pages

N-channel 80 V, 4.3 m standard level MOSFET in I2PAK

文件：240.24 Kbytes Page：15 Pages

NextPower MOSFETs

文件：1.8032 Mbytes Page：8 Pages

N-channel 80 V, 4.3 m standard level MOSFET in TO220

文件：247.23 Kbytes Page：15 Pages

8 AMPS 20 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER

文件：171.04 Kbytes Page：2 Pages

8 AMPS 20 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER

文件：171.04 Kbytes Page：2 Pages

8 AMPS 20 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER

文件：171.04 Kbytes Page：2 Pages

8 AMPS 20 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER

文件：171.04 Kbytes Page：2 Pages

Silicon Power Rectifiers

文件：1.03081 Mbytes Page：2 Pages