Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)

1. General description Dual, standard level N-channel MOSFET in an LFPAK56D package (halfbridge configuration), using NextpowerS3 technology. An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a

N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78

1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching & conduction losses • Robust construction for dem

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 130A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E

1. General description N-channel enhancement mode MOSFET in a LFPAK56E package qualified to 175 °C. Part of Nexperia's ASFETs for hotswap portfolio, the PSMN4R2-80YSE delivers very low RDSon and a very strong linear-mode (SOA) performance in a high-reliability copper-clip LFPAK56E package. PSM

N-channel 30 V, 4.2 m廓 logic level MOSFET in LFPAK33 using NextPowerS3 Technology

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N-channel 30 V, 4.2 m廓 logic level MOSFET in LFPAK33 using NextPowerS3 Technology

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Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)

N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78

N-channel 60 V, 3.9 m廓 logic level MOSFET in SOT78

N-channel 80 V, 4.2 mOhm, SuperSOA MOSFET in LFPAK56E

POWER INDUCTOR

●FEATURE 1. Excellent solder heat resistance(add “C” is for high current type) 2. Low voltage drops and small variations inductance ●APPLICATION 1. DC power supply circuits 2. Power line choke coils…etc

WIRE WOUND SMD INDUCTOR

●FEATURE 1. Low core loss for high frequency power application 2. Large terminal surface ●APPLICATION 1. Portable communication equipment, notebook computer

Ultrafast recovery diode

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Ultrafast recovery diode

文件：143.48 Kbytes Page：13 Pages

50W Surface Mount

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