N-channel 25 V 4.5 mΩ logic level MOSFET in LFPAK

1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High reliability Power SO8 package, qualified to 175°C  L

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

N-channel 30 V 4 mΩ logic level MOSFET in LFPAK

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low swi

N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET

1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  Advanced TrenchMOS provides low RDSon and low gate ch

N-channel 25 V 4.5 m廓 logic level MOSFET in LFPAK

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NextPower MOSFETs

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NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

文件：1.8032 Mbytes Page：8 Pages

N-channel 25 V 4.5 m logic level MOSFET in LFPAK

文件：425 Kbytes Page：15 Pages

NextPower MOSFETs

文件：1.8032 Mbytes Page：8 Pages

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

N-channel 30 V 4 mΩ logic level MOSFET in LFPAK

N-channel TrenchMOS logic level FET

N-channel 30 V, 4.0 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology

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N-channel 30 V, 4.0 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件：369.11 Kbytes Page：13 Pages

N-channel 30 V, 4.0 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件：781.76 Kbytes Page：13 Pages

N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET

N-channel LFPAK 40 V 4.2 m廓 standard level MOSFET

N-channel LFPAK 60 V, 4.0 m廓 standard level FET

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N-channel LFPAK 60 V, 4.0 mΩ standard level FET

N-channel LFPAK 60 V, 4.0 m廓 standard level FET

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SMD Shielded Power Inductor

Features: • Provides high power and high saturation • Provides magnetic shielding against radiation • Electrode directly connected to ferrite core • Contact Stackpole for additional inductance values • Operating temperature 40 ~ 125ºC • 100% RoHS compliant and lead free without exemption

Standard, 85?

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MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS

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Radial Lead

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Miniature Molded Wirewound

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