N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET

1.1 General description Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits  High efficiency due to low switching and conduct

N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 2. Features and benefits • High efficiency due to low swit

N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 120

N-channel 80 V, 3.5 mΩ standard level MOSFET in I2PAK

1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction loss

NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package

description NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. Features • Low Qrr for higher efficiency and lower spiking • 150 A ID(max) – demonstrated continuous current rating • Low QG × RDSon FOM for high effi

N-channel 25 V, 3.72 m廓 logic level MOSFET in LFPAK33 using NextPowerS3 Technology

文件：734.65 Kbytes Page：13 Pages

N-channel 30 V 3.6 m廓 logic level MOSFET

N-channel DFN3333-8 30 V 3.6 m廓 logic level MOSFET

文件：345.48 Kbytes Page：15 Pages

N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET

N-channel DFN3333-8 30 V 3.6 m廓 logic level MOSFET

文件：345.48 Kbytes Page：15 Pages

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK

N-channel TrenchMOS logic level FET

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes Page：234 Pages

Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes Page：234 Pages

N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

isc N-Channel MOSFET Transistor

文件：298.85 Kbytes Page：2 Pages

N-channel 80 V, 3.5 m standard level MOSFET in I2PAK

文件：238.16 Kbytes Page：15 Pages

N-channel 80 V, 3.5 m廓 standard level MOSFET in I2PAK

文件：238.16 Kbytes Page：15 Pages

isc N-Channel MOSFET Transistor

文件：305.36 Kbytes Page：2 Pages

N-channel 80 V, 3.5 m廓 standard level MOSFET in TO-220

文件：825.03 Kbytes Page：15 Pages

N-channel 80 V, 3.5 m廓 standard level MOSFET in TO-220

文件：244.7 Kbytes Page：15 Pages

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

SMD Shielded Power Inductor

Features: • Provides high power and high saturation • Provides magnetic shielding against radiation • Electrode directly connected to ferrite core • Contact Stackpole for additional inductance values • Operating temperature 40 ~ 125ºC • 100% RoHS compliant and lead free without exemption

3-Electrode Gas Discharge Tubes

文件：316.62 Kbytes Page：2 Pages

3-Electrode Gas Discharge Tubes

文件：273.65 Kbytes Page：2 Pages

Output to 5A, 30 Vdc AC/DC Control

文件：93.92 Kbytes Page：3 Pages