N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88

1. General description N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R9-100SSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability

N-channel 25 V 3.15 mΩ logic level MOSFET in LFPAK using NextPower technology

1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Low

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88

N-channel 25 V 3.15 mΩ logic level MOSFET in LFPAK using NextPower technology

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

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NextPower MOSFETs

文件：1.8032 Mbytes Page：8 Pages

N-channel 25 V 3.15 m廓 logic level MOSFET in LFPAK using NextPower technology

文件：363.96 Kbytes Page：15 Pages

N-channel 30 V 2.95 m廓 logic level MOSFET in LFPAK33 using NextPower Technology

文件：1.15613 Mbytes Page：14 Pages

N-channel 30 V 2.95 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

N-channel 30 V 2.95 m廓 logic level MOSFET in LFPAK33 using NextPower Technology

文件：406.88 Kbytes Page：14 Pages

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

SMD Shielded Power Inductor

Features: • Provides high power and high saturation • Provides magnetic shielding against radiation • Electrode directly connected to ferrite core • Contact Stackpole for additional inductance values • Operating temperature 40 ~ 125ºC • 100% RoHS compliant and lead free without exemption