NextPower 100 V, 2.07 mOhm, 267 Amp, N-channel MOSFET in LFPAK88 package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 267 Amps ID(max) continuous current rating • Low QG × RDSon FOM

N-channel 30 V 2.1 mΩ logic level MOSFET

1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losse

N-channel 30 V 2 mΩ logic level MOSFET in LFPAK

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low swi

N-channel 40 V, 2.1 mΩ, 180 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 180 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 180 A

N-channel 40 V, 2.1 mΩ, 180 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 180 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 180 A

N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E

1. General description 200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking

N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

N-channel 25 V, 2.1 m廓 logic level MOSFET in LFPAK33 using NextPowerS3 Technology

文件：734.73 Kbytes Page：13 Pages

N-channel 25 V, 2.09 m廓, 140 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件：730.5 Kbytes Page：14 Pages

N-channel 25 V, 2.09 mΩ, 140 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

N-channel 30 V 2.1 mΩ logic level MOSFET in D2PAK

N-channel 30 V 2.1 m廓 logic level MOSFET in D2PAK

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isc N-Channel MOSFET Transistor

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N-channel 30 V 2.1 m logic level MOSFET in D2PAK

文件：214.09 Kbytes Page：15 Pages

isc N-Channel MOSFET Transistor

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N-channel 30 V 2.1 m廓 logic level MOSFET

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

N-channel 30 V 2 m廓 logic level MOSFET in LFPAK

N-channel TrenchMOS logic level FET

N-channel 30 V 2 m廓 logic level MOSFET in LFPAK

N-channel 30 V, 2.0 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件：304.84 Kbytes Page：13 Pages

N-channel 30 V, 2.0 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件：239.34 Kbytes Page：13 Pages

N-channel 30 V 2 m廓 logic level MOSFET in LFPAK

文件：738.19 Kbytes Page：13 Pages

-channel 30 V 2 m廓 logic level MOSFET in LFPAK

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Discrete and MOSFET components, analog & logic ICs

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N-channel 60 V 2.2 m廓 standard level MOSFET in I2PAK

文件：826.79 Kbytes Page：15 Pages

isc N-Channel MOSFET Transistor

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N-channel 60 V 2.2 m standard level MOSFET in I2PAK

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N-channel 60 V 2.2 m廓 standard level MOSFET in TO-220

文件：749.02 Kbytes Page：14 Pages

isc N-Channel MOSFET Transistor

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N-channel 60 V 2.2 m廓 standard level MOSFET in TO-220

文件：244.48 Kbytes Page：14 Pages

N-channel 60 V, 2.2 m廓 standard level MOSFET in TO-220 using Trench Technology

文件：386.36 Kbytes Page：14 Pages

High-Q Capacitors (Microwave Chip Capacitors)

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Multilayer Ceramic Capacitors(High-Q Capacitors)

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Magnetically shielded structure

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(Potentiometers) Wirewound

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RC Series carbon composition

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