N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using NextPower technology

1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Low

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK

1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  Advanced TrenchMOS provides low RDSon and low gate charg

N-channel 40 V, 1.8 mOhm, 200 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

General description 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance po

N-channel 40 V, 1.8 mOhm, 200 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

General description 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance po

N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 200 A

N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 200 A

N-channel 60 V 2 mΩ standard level MOSFET in D2PAK

1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

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NextPower MOSFETs

文件：1.8032 Mbytes Page：8 Pages

N-channel 25 V 1.9 m廓 logic level MOSFET in LFPAK using NextPower technology

文件：349.91 Kbytes Page：15 Pages

N-channel 25 V, 1.75 m廓, 170 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件：733.13 Kbytes Page：14 Pages

N-channel 25 V, 1.75 mΩ, 170 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK

N-channel TrenchMOS logic level FET

N-channel 30 V 1.7 m廓 logic level MOSFET in LFPAK

N-channel 30 V 1.7 m廓 logic level MOSFET in LFPAK

N-channel 30 V 1.7 m廓 logic level MOSFET in LFPAK

N-channel 30 V 1.7 m廓 logic level MOSFET in LFPAK

PSMN1R7-30YLH - N-channel 30 V, 1.7 mΩ, 170 A logic level MOSFET in LFPAK56 using NextPowerS3+ Technology

Discrete and MOSFET components, analog & logic ICs

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Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes Page：234 Pages

N-channel 60 V 2 mili ohm standard level MOSFET in D2PAK

文件：235.16 Kbytes Page：14 Pages

isc N-Channel MOSFET Transistor

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N-channel 60 V 2 m standard level MOSFET in D2PAK

文件：235.16 Kbytes Page：14 Pages

TeSys D - contactor coil - LXD1 - 440 V AC 50/60 Hz for 9??38 A contactor

文件：131.98 Kbytes Page：2 Pages