N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology

1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A and optimized with low gate resistance (RG) for fast-switching applications. 2. Features and benef

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low swi

N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK

1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  Advanced TrenchMOS provides low RDSon and low gate charg

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

N-channel 40 V 1.6 mΩ standard level MOSFET in TO220

1. General description Standard level N-channel MOSFET in SOT78 (TO220) using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching and conduction losses • Robust constr

N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 240

N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 240

N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E

1. General description 200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking

N-channel 60 V, 1.5 mOhm, ASFET for Battery System in LFPAK56E

1. General description ASFET for Battery System applications, characterized by low RDSon and strong SOA capability for reduced I2R conduction losses. ASFETs deliver high efficiency, reduced heat generation and superior handling of inrush current during transient and fault conditions. 2. Feat

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes Page：234 Pages

Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes Page：234 Pages

N-channel TrenchMOS logic level FET

N-channel 30 V 1.5 m廓 logic level MOSFET in D2PAK

文件：737.97 Kbytes Page：13 Pages

isc N-Channel MOSFET Transistor

文件：298.79 Kbytes Page：2 Pages

N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK

N-channel 30 V 1.5 m廓 logic level MOSFET in D2PAK

文件：229.89 Kbytes Page：13 Pages

N-channel 30 V 1.5 m廓 logic level MOSFET in LFPAK

NextPower MOSFETs

文件：1.8032 Mbytes Page：8 Pages

N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

文件：1.8032 Mbytes Page：8 Pages

NextPower MOSFETs

文件：1.8032 Mbytes Page：8 Pages

N-channel 30 V 1.55m廓 logic level MOSFET in LFPAK using NextPower technology

文件：355.98 Kbytes Page：15 Pages

isc N-Channel MOSFET Transistor

文件：299.69 Kbytes Page：2 Pages

N-channel 40 V 1.6 m廓 standard level MOSFET in I2PAK.

文件：822.23 Kbytes Page：14 Pages

N-channel 40 V 1.6 m standard level MOSFET in I2PAK.

文件：236.75 Kbytes Page：14 Pages

N-channel 40 V 1.6 m廓 standard level MOSFET in TO220

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

文件：1.8032 Mbytes Page：8 Pages

isc N-Channel MOSFET Transistor

文件：305.65 Kbytes Page：2 Pages

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes Page：234 Pages

Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes Page：234 Pages

POWER INDUCTOR

●FEATURE 1. Excellent solder heat resistance(add “C” is for high current type) 2. Low voltage drops and small variations inductance ●APPLICATION 1. DC power supply circuits 2. Power line choke coils…etc

DUPER FAST RECOVERY RECTIFIER (SWITCHING TYPE POWER SUPPLY APPLICATIONS)

SWITCHING MODE POWER SUPPLY APPLICATIONS • Repetitive Peak Reverse Voltage : VRRM= 400V • Average Forward Current : IF (AV)= 1.5A (Ta = 25°C) • Very Fast Reverse−Recovery Time : trr= 100ns

Thermal Conductive Pad

FEATURES * Thermal conductivity: 1.5W/m.k * Low pressure applications * Natural tack * Electrical insulating * High temperature resistance * 100 Lead (Pb)-free and RoHS Compliant DESCRIPTION ATCR1R5 series thermal pad is a special compound formed by mixing the silicon gel flour and the

Coils and Chokes for general use

文件：192.91 Kbytes Page：1 Pages

Coils and Chokes for general use

文件：192.91 Kbytes Page：1 Pages