N-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

1. General description N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode applications. 2. Features and benefits • Fully optimized Safe Operating Area (SOA) for

N-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

N-channel 30 V 1.15 mOHM logic level MOSFET in LFPAK

N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

1. General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High reliability Power SO8 package, qualified to 175°C • Opti

N-channel 30 V 1.15 m廓 logic level MOSFET in LFPAK using NextPower technology

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NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

文件：1.8032 Mbytes Page：8 Pages

NextPower MOSFETs

文件：1.8032 Mbytes Page：8 Pages