N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

N-channel TrenchMOS SiliconMAX standard level FET

1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and ben

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 39A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 57mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel TrenchMOS SiliconMAX standard level FET

文件：238.54 Kbytes Page：11 Pages

N-channel TrenchMOS SiliconMAX standard level FET

1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and ben

AUTO START AND AUTO MAINS FAILURE CONTROL MODULES

KEY FEATURES • Alternator frequency & MPU speed sensing in one variant • Largest back-lit icon display in its class • Real time clock provides accurate event logging • Fully configurable via the fascia or PC using USB communication • Extremely efficient power save mode • 3 phase genera