N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications

1. General description New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of “soft-start”, thermal management

N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAXproducts use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications

N-channel 100 V 36.6 m standard level MOSFET in LFPAK33 designed specifically for high power PoE applications

N-channel TrenchMOS transistor

文件：86.17 Kbytes Page：7 Pages

N-channel TrenchMOS™ transistor

STATIC SEALS

 DESCRIPTION The BECA 040 profile is a polyurethane static seal for rod (inside) sealing.  APPLICATIONS Mobile machinery Injection presses Presses Standard cylinders

Fast-Acting Fuse

文件：140.65 Kbytes Page：1 Pages

POLYSTYRENE/ POLYCARBONATE ENCLOSURE ABOX 040

文件：124.01 Kbytes Page：1 Pages

Fast-Acting Fuse

文件：526 Kbytes Page：1 Pages

Suitable for the telecommunications industry

文件：473.65 Kbytes Page：1 Pages