N-channel enhancement mode field-effect transistor

Description SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN038-100K in SOT96-1 (SO8) Features ■ Very low on-state resistance ■ Fast switching ■ TrenchMOS™ technol

丝印代码：38RS10H；N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • High peak drain current IDM • Copper clip and flexible Leads • High operating junction temperature Tj = 175 °C • Superior reliability • Low

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

N-channel enhancement mode field-effect transistor

Description SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN038-100K in SOT96-1 (SO8) Features ■ Very low on-state resistance ■ Fast switching ■ TrenchMOS™ technol

N-channel TrenchMOS SiliconMAX standard level FET

N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

PSMN038-100K - N-channel TrenchMOS SiliconMAX standard level FET

N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56

丝印代码：038100；N-channel 100 V 37.5 m廓 logic level MOSFET in LFPAK56

文件：753 Kbytes Page：13 Pages

N-channel 100 V 37.5 m廓 logic level MOSFET in LFPAK56

文件：328.52 Kbytes Page：13 Pages

1.8cm (0.7 Type) Black-and-White LCD Panel

Description The LCX038AST is a 1.8cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with a built-in peripheral driving circuit. Use of three LCX038AST panels provides a full-color representation. The striped arrangement suitable for data proj

Quarter-Brick

DESCRIPTION QBS single output DC/DC converters provide up to 120 Watts of output power in an industry standard, quarter-brick footprint. The QBS converters feature open-frame packaging, along with planar magnetics to provide maximum useable power with minimal thermal constraints. The QBS is espec

Quarter-Brick

DESCRIPTION QBS single output DC/DC converters provide up to 120 Watts of output power in an industry standard, quarter-brick footprint. The QBS converters feature open-frame packaging, along with planar magnetics to provide maximum useable power with minimal thermal constraints. The QBS is espec

Quarter-Brick

DESCRIPTION QBS single output DC/DC converters provide up to 120 Watts of output power in an industry standard, quarter-brick footprint. The QBS converters feature open-frame packaging, along with planar magnetics to provide maximum useable power with minimal thermal constraints. The QBS is espec