丝印代码：038100；N-channel 100 V 37.5 m廓 logic level MOSFET in LFPAK56

文件：753 Kbytes Page：13 Pages

N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56

N-channel 100 V 37.5 m廓 logic level MOSFET in LFPAK56

文件：328.52 Kbytes Page：13 Pages

丝印代码：38RS10H；N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • High peak drain current IDM • Copper clip and flexible Leads • High operating junction temperature Tj = 175 °C • Superior reliability • Low

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

N-channel enhancement mode field-effect transistor

Description SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN038-100K in SOT96-1 (SO8) Features ■ Very low on-state resistance ■ Fast switching ■ TrenchMOS™ technol

N-channel TrenchMOS SiliconMAX standard level FET