PSMN035-150P价格

参考价格:¥6.7304

型号:PSMN035-150P,127 品牌:NXP 备注:这里有PSMN035-150P多少钱,2026年最近7天走势,今日出价,今日竞价,PSMN035-150P批发/采购报价,PSMN035-150P行情走势销售排行榜,PSMN035-150P报价。
型号 功能描述 生产厂家 企业 LOGO 操作
PSMN035-150P

N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

Philips

飞利浦

PSMN035-150P

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

NEXPERIA

安世

PSMN035-150P

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 35mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

PSMN035-150P

N-channel TrenchMOS SiliconMAX standard level FET

NEXPERIA

安世

PSMN035-150P

N-channel TrenchMOS SiliconMAX standard level FET

ETC

知名厂家

PSMN035-150P

N-Channel 150 V (D-S) MOSFET

文件:1.00027 Mbytes Page:8 Pages

VBSEMI

微碧半导体

PSMN035-150P

N-channel TrenchMOS transistor

文件:145.14 Kbytes Page:9 Pages

Philips

飞利浦

N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

Philips

飞利浦

N-channel TrenchMOS SiliconMAX standard level FET

ETC

知名厂家

N-channel TrenchMOS SiliconMAX standard leve

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 35mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

N-channel TrenchMOS transistor

文件:145.14 Kbytes Page:9 Pages

Philips

飞利浦

PSMN035-150P产品属性

  • 类型

    描述

  • 型号

    PSMN035-150P

  • 功能描述

    MOSFET RAIL PWR-MOS

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-2 11:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
23+
TO-220
8999999
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
60000
一级代理-主营优势-实惠价格-不悔选择
恩XP
23+
TO-220
8000
只做原装现货
恩XP
1923+
TO-220-3
6900
只做进口原装品质决定一切价格优惠
恩XP
23+
TO-220
50000
全新原装正品现货,支持订货
恩XP
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
NEXPERIA/安世
25+
NA
860000
明嘉莱只做原装正品现货
PH
24+
原厂封装
65250
支持样品,原装现货,提供技术支持!
恩XP
24+
-
7793
支持大陆交货,美金交易。原装现货库存。
恩XP
19+
TO-220
12000

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