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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PSMN030-150P | N-channelTrenchMOStransistor GENERALDESCRIPTION SiliconMAXproductsusethelatestPhilipsTrenchtechnologytoachievethelowestpossibleon-stateresistanceineachpackageateachvoltagerating. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Lowthermalresistance Applications:- | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  |   |
PSMN030-150P | N-channelTrenchMOSSiliconMAXstandardlevelFET 1.1Generaldescription SiliconMAXstandardlevelN-channelenhancementmodeField-EffectTransistor(FET)in aplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedfor useincomputing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandb | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | |
PSMN030-150P | N-ChannelMOSFET FEATURES ·DrainCurrent-ID=55.5A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=30mΩ(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC) | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
N-channelTrenchMOStransistor GENERALDESCRIPTION SiliconMAXproductsusethelatestPhilipsTrenchtechnologytoachievethelowestpossibleon-stateresistanceineachpackageateachvoltagerating. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Lowthermalresistance Applications:- | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channelTrenchMOSSiliconMAXstandardlevelFET 1.1Generaldescription SiliconMAXstandardlevelN-channelenhancementmodeField-EffectTransistor(FET)in aplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedfor useincomputing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandb | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
N-channelTrenchMOSSiliconMAXstandardlevelFET 文件：174.41 Kbytes Page：12 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | |
PSMN030-150P产品属性
- 类型
描述
- 型号
PSMN030-150P
- 功能描述
MOSFET RAIL PWR-MOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NXP/恩智浦 |
22+ |
TO-220 |
5070 |
全新原装,价格优势,原厂原包 |
|||
NXP |
18+ |
TO220 |
85600 |
保证进口原装可开17%增值税发票 |
|||
NXP/恩智浦 |
1950+ |
TO-220 |
4856 |
只做原装正品现货!或订货假一赔十! |
|||
NXP |
23+ |
SOT78TO-TO-220AB |
37650 |
全新原装真实库存含13点增值税票! |
|||
23+ |
N/A |
90650 |
正品授权货源可靠 |
||||
PHILIPS/飞利浦 |
23+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
|||
Nexperia USA Inc. |
24+ |
TO-220AB |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
NXP/恩智浦 |
21+ |
TO220 |
10000 |
全新原装 公司现货 价格优 |
|||
NXP/恩智浦 |
22+ |
TO-220 |
9000 |
原装正品 |
|||
NXP |
2020+ |
TO-220 |
49490 |
公司代理品牌,原装现货超低价清仓! |
PSMN030-150P芯片相关品牌
PSMN030-150P规格书下载地址
PSMN030-150P参数引脚图相关
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2019-2-19
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