N-channel 100V 13.9mΩ standard level MOSFET in D2PAK

1. General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 68A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13.9mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 68A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13.9mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel 100V 13.9mΩ standard level MOSFET in I2PAK.

1.1 General description Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  Low conduction losses due to low on-state r

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 68A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13.9mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High efficiency due to low switching and conduction loss

N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)

1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and con

N-channel DFN3333-8 30 V 13 mΩ logic level MOSFET

1.1 General description Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits  High efficiency due to low switching and conduct

Dual N-channel 40 V, 13 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)

1. General description Dual, standard level N-channel MOSFET in an LFPAK56D package (halfbridge configuration), using NextpowerS3 technology. An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a

N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • Dual MOSFET • Repetitive avalanche rated • High reliability LFPAK56D package • Copper-clip, solder die attach • Qualified to 175 °C Applica

N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • Dual MOSFET • Repetitive avalanche rated • High reliability LFPAK56D package • Copper-clip, solder die attach • Qualified to 175 °C Appl

N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET

1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha

N-channel 100V 13.9m廓 standard level MOSFET in D2PAK

N-Channel 100-V (D-S) MOSFET

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N-channel 100V 13.9m廓 standard level MOSFET in D2PAK

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N-channel 100 V 13.9 m廓 standard level MOSFET in I2PAK

PSMN013-100ES - N-channel 100V 13.9mΩ standard level MOSFET in I2PAK.

N-channel 100V 13.9m廓 standard level MOSFET in TO220.

N-Channel 100-V (D-S) MOSFET

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N-channel 100V 13.9mΩ standard level MOSFET in TO220.

N-channel 100V 13.9m廓 standard level MOSFET in TO220

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N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)

N-channel 100V 13 m廓 standard level MOSFET in TO220F (SOT186A)

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N-channel 100 V 13 m廓 standard level MOSFET in LFPAK56

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N-channel 100 V 13 m廓 standard level MOSFET in LFPAK56

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N-channel 30 V 13 m廓 logic level MOSFET

N-channel 30 V 13.6 m廓 logic level MOSFET in LFPAK33 using NextPower Technology

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N-channel 30 V 13.6 m廓 logic level MOSFET in LFPAK33 using NextPower Technology

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N-channel 30 V 13.6 m廓 logic level MOSFET in LFPAK using NextPower technology

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N-channel 30 V 13.6 m廓 logic level MOSFET in LFPAK using NextPower technology

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N-channel 60 V, 13 m廓 logic level MOSFET in LFPAK56

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N-channel LFPAK 80 V 12.9 m廓 standard level MOSFET

Aluminum Electrolytic Capacitors Radial Low Leakage Current

FEATURES • Useful life at +85 °C: 3000 h • Low leakage current, low energy consumption • Miniaturized, high CV-product per unit volume • Natural pitch 2.5 mm and 5 mm • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Radial leads, cylindrical aluminum case, all-insulated

Low starting threshold

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Aluminum Electrolytic Capacitors Radial Low Leakage Current

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Aluminum Capacitors Radial Low Leakage Current

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Fast-Acting Fuse

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