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PSMN009-100P价格
参考价格：￥9.4961
型号：PSMN009-100P,127 品牌：Philips Semiconducto 备注：这里有PSMN009-100P多少钱，2025年最近7天走势，今日出价，今日竞价，PSMN009-100P批发/采购报价，PSMN009-100P行情走势销售排行榜，PSMN009-100P报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PSMN009-100P | N-channel enhancement mode field-effect transistor Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC converters ■ OR-ing applications. | Philips 飞利浦 |   | |
PSMN009-100P | N-channel TrenchMOS SiliconMAX standard level FET | ETC 知名厂家 | ETC | |
PSMN009-100P | N-channel TrenchMOS SiliconMAX standard level FET 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b | NEXPERIA 安世 | | |
PSMN009-100P | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | |
PSMN009-100P | N-channel TrenchMOS SiliconMAX standard level FET | NEXPERIA 安世 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-channel TrenchMOS SiliconMAX standard level FET 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b | NEXPERIA 安世 | | ||
N-channel enhancement mode field-effect transistor Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC converters ■ OR-ing applications. | Philips 飞利浦 | | ||
N-channel TrenchMOS SiliconMAX standard level FET | ETC 知名厂家 | ETC | |
PSMN009-100P产品属性
- 类型
描述
- 型号
PSMN009-100P
- 功能描述
MOSFET RAIL PWR-MOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
2025+ |
TO-220-3 |
3577 |
全新原厂原装产品、公司现货销售 |
|||
PHI |
2023+ |
SOT78(TO-220 |
50000 |
原装现货 |
|||
恩XP |
18+ |
TO-220 |
85600 |
保证进口原装可开17%增值税发票 |
|||
恩XP |
08+ |
TO-220 |
6000 |
绝对原装自己现货 |
|||
NEXPERIA/安世 |
2447 |
SOT78 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ADI |
23+ |
TO-220 |
8000 |
只做原装现货 |
|||
ADI |
23+ |
TO-220 |
7000 |
||||
恩XP |
11++ |
NA |
40 |
||||
恩XP |
24+ |
TO-220F |
30980 |
原装现货/放心购买 |
|||
恩XP |
25+ |
SOT78 |
188600 |
全新原厂原装正品现货 欢迎咨询 |
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PSMN009-100P规格书下载地址
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2019-2-19
DdatasheetPDF页码索引
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