N-channel logic level TrenchMOS transistor

VDSS = 25 V ID = 75 A RDS(ON) ≤ 4.3 mΩ (VGS = 10 V) RDS(ON) ≤ 5 mΩ (VGS = 5 V) GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:- • d.c. to d.c. converters

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel logic level TrenchMOS transistor

VDSS = 25 V ID = 75 A RDS(ON) ≤ 4.3 mΩ (VGS = 10 V) RDS(ON) ≤ 5 mΩ (VGS = 5 V) GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:- • d.c. to d.c. converters

N-channel logic level TrenchMOS transistor

文件：111.27 Kbytes Page：9 Pages

N-channel logic level TrenchMOS transistor

Silicon MAX N-channel logic level TrenchMOS™ transistor

N-channel logic level TrenchMOS transistor

文件：111.27 Kbytes Page：9 Pages