N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PSMN003-30P in SOT78 (TO-220AB) PSMN003-30B in SOT404 (D2-PAK) Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency

N-channel TrenchMOS intermediate level FET

N-channel TrenchMOS intermediate level FET

1.1 General description SiliconMAX intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel TrenchMOS intermediate level FET

MOSFET N-CH 30V 75A TO220AB

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PSMN003-30P in SOT78 (TO-220AB) PSMN003-30B in SOT404 (D2-PAK) Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency