IGBT Module

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TRANSILTM

Description Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied ICs. Features ■ Peak pulse power: 5000 W

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI HF50-12F is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely suitable and capable of withstanding high VSRW under operating conditions. FEATURES: • PG =

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI HF50-12S is Designed for FEATURES: • PG = 16 dB min. at 50 W/30 MHz • IMD3 = -30 dBc max. at 50 W(PEP) • Omnigold™ Metalization System

Single output 50W ~ 600W???

Features • marking (Low Voltage Directive) • Wide input voltage range: Universal input 85 ~ 265VAC • PFHC (EN61000-3-2) • EMI (EN55011-B, EN55022-B, VCCI-B, FCC-B) • EMC (EN61000-4-2, -3, -4, -5, -6) • 5 year warranty

Linear power supply single output 15W ~ 50W

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