位置：首页 > IC中文资料 > PSC02N65AETR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 |   | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.2A, RDS(ON) = 10.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 2.0A, RDS(ON) = 5.0W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-126F package. Lead-free plating ; RoHS compliant. | CET-MOS 华瑞 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
24+ |
NA/ |
5280 |
原装现货,当天可交货,原型号开票 |
|||
CET/華瑞 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
CET/華瑞 |
2511 |
TO-263 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
CET |
24+ |
50000 |
|||||
CET |
25+ |
TO-263 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
CET |
24+ |
TO-263 |
90000 |
进口原装现货假一罚十价格合理 |
|||
CET |
23+ |
TO-263 |
7300 |
专注配单,只做原装进口现货 |
|||
CET/華瑞 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
|||
CET/華瑞 |
23+ |
TO-263 |
79999 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET/華瑞 |
23+ |
SOT-263 |
50000 |
全新原装正品现货,支持订货 |
PSC02N65AETR芯片相关品牌
PSC02N65AETR规格书下载地址
PSC02N65AETR参数引脚图相关
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PSC02N65AETR数据表相关新闻
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2019-11-26
DdatasheetPDF页码索引
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