50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET)

1. General description NPN/NPN Resistor-Equipped double Transistors (RET) in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces c

RoHS-Compliant Commencing With 1/1/2017 Production

Construction 1) Size PG 9 2) Clamping Range (In) - 3) Clamping Range (mm) - 4) Thread Length (In) .24 5) Thread Length (mm) 6 6) Color Slate 6) Packing Unit 10

Battery pressure monitor sensor

PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

RoHS-Compliant Commencing With 1/1/2017 Production

Construction 1) Size PG 9 2) Clamping Range (In) - 3) Clamping Range (mm) 4-8.0 4) Thread Length (In) - 5) Thread Length (mm) 8 6) Color Slate 6) Packing Unit 10