100V Single N-Channel MOSFET

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场效应电晶体

100V Single N-Channel MOSFET

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MOSFET ??Power, Single N-Channel 100 V, 14.4 m, 45 A

Features • Shielded Gate MOSFET Technology • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Low QRR, Soft Recovery Body Diode • Low QOSS to Improve Light Load Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and ar

MOSFET - Power, Single N-Channel 100 V, 12.2 m, 52 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MOSFET - Power, Single N-Channel 100 V, 12.2 m, 52 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant