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型号 功能描述 生产厂家 企业 LOGO 操作

125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18125E is a 125 W, 26 V, N-channel gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multi-carrier class AB powe

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125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18125E is a 125 W, 26 V, N-channel gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multi-carrier class AB powe

TRIQUINT

125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18125E is a 125 W, 26 V, N-channel gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multi-carrier class AB powe

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DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件:82.3 Kbytes Page:1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

Armoire autoportante modulaire a 2 portes en acier doux de type 12

文件:150.17 Kbytes Page:4 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

PPOD18125产品属性

  • 类型

    描述

  • 型号

    PPOD18125

  • 制造商

    Pentair Technical Products/Hoffman

  • 功能描述

    PP OD 1800X1200x500 Lt Gray, 70.87x47.24x19.69, Steel

更新时间:2026-5-22 17:03:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+
DIP28
5650
公司原厂原装现货假一罚十!特价出售!强势库存!
AGR
24+
SOP16
100
N/A
00/01+
SOP-8
144
全新原装100真实现货供应
AGR
22+
TSSOP
8200
原装现货库存.价格优势!!
SFH
00+
DIP4
7
原装现货海量库存欢迎咨询
TRIQUINT
23+
TO-59
8510
原装正品代理渠道价格优势
AGR
24+
SOP-8
9600
原装现货,优势供应,支持实单!
TRIQUINT
26+
212
现货供应
AGERE
23+
高频管
7300
专注配单,只做原装进口现货
ADI/亚德诺
25+
NA
20000
原装

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