型号 功能描述 生产厂家 企业 LOGO 操作
PPMS1195B

包装:散装 描述:LABEL 9\ 标签,标志,护栏,标识 标签,贴纸,贴标 - 预印

PANDUIT

PPMS1195B

包装:散装 描述:LABEL 9\ 标签,标志,护栏,标识 标签,贴纸,贴标 - 预印

PANDUIT

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

CET

华瑞

Miniature Slip Ring - 12mm diameter, 12 wires, max 240V @ 2A

文件:210.61 Kbytes Page:2 Pages

Adafruit

N-Channel MOSFET uses advanced trench technology

文件:1.24964 Mbytes Page:4 Pages

DOINGTER

杜因特

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