Silicon planar type

PIN Photodiode For optical control systems Features ● Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) ● High sensitivity, high reliability ● Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 900 nm (typ.) ● Wide

封装/外壳：2-SIP 包装：散装 描述：SENSOR PHOTODIODE 900NM 2SIP 传感器，变送器 光学传感器 - 光电二极管

PIN Photodiode

PIN Photodiode For optical control systems Features ● Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) ● High sensitivity, high reliability ● Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 970 nm (typ.) ● Wide

封装/外壳：2-SIP 包装：散装 描述：SENSOR PHOTODIODE 970NM 2SIP 传感器，变送器 光学传感器 - 光电二极管

PIN Photodiode

DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS

NPN Silicon Darlington Power Transistor ​​​​​​​ TheBU323AP is a monolithic darlington transistor designedfor automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —VCER(sus)= 475 Vdc • 125 Watts Capability at 50 Volts • VCESat Specifie

AUTOPROTECTED DARLINGTON 10 AMPERES 360-450 VOLTS CLAMP 150 WATTS

NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50 Min • 10

3-Amp, 5-Volt Positive Regulator

文件：203.43 Kbytes Page：8 Pages

3-Amp, 5-Volt Positive Regulator

文件：203.43 Kbytes Page：8 Pages