RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50 Min • 10

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50 Min • 10

The RF Line NPN Silicon Power Transistor 20W, 400MHz, 28V

Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed performance at 400 MHz, 28 V Output power = 20 W Power gain = 10 dB min. Efficiency = 50 min. • 100 tested for load mismatch at all phase angles with 30

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF323 is Designed for Wide Band Large-Signal Driver and Predriver Applications in the 200 to 500 MHz Range. FEATURES INCLUDE: • Gold Metalization • 30:1 VSWR

NPN Silicon RF power transistor

Description: MRF323 is. designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50 Min

Designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range

Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50 Min • 100 Tested for Load Mismatch at all Phase Angles with

Bipolar

Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. ·Guaranteed Performance at 400 MHz, 28 V: Output Power = 20 W., Power Gain = 10 dB min, Efficiency = 50% min.\n·Gold Metallization System for High Reliability\n·100%Tested for Load Mismatch at all phase Angels with 30:1 VSWR •\n·Computer Controlled Wirebonding Gives Consistent Input Impedanc;

The RF Line NPN Silicon Power Transistor 20W, 400MHz, 28V

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封装/外壳：244-04 包装：托盘 描述：TRANS RF NPN 33V 1.1A 244-04 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF POWER TRANSISTOR NPN SILICON

Trans GP BJT NPN 33V 3A 4-Pin Case 244-04

The RF Line NPN Silicon Power Transistor

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The RF Line NPN Silicon Power Transistor

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DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS

NPN Silicon Darlington Power Transistor ​​​​​​​ TheBU323AP is a monolithic darlington transistor designedfor automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —VCER(sus)= 475 Vdc • 125 Watts Capability at 50 Volts • VCESat Specifie

AUTOPROTECTED DARLINGTON 10 AMPERES 360-450 VOLTS CLAMP 150 WATTS

NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and

3-Amp, 5-Volt Positive Regulator

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3-Amp, 5-Volt Positive Regulator

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