RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50 Min • 10

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50 Min • 10

The RF Line NPN Silicon Power Transistor 20W, 400MHz, 28V

Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed performance at 400 MHz, 28 V Output power = 20 W Power gain = 10 dB min. Efficiency = 50 min. • 100 tested for load mismatch at all phase angles with 30

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF323 is Designed for Wide Band Large-Signal Driver and Predriver Applications in the 200 to 500 MHz Range. FEATURES INCLUDE: • Gold Metalization • 30:1 VSWR

Designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range

Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50 Min • 100 Tested for Load Mismatch at all Phase Angles with

NPN Silicon RF power transistor

Description: MRF323 is. designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50 Min

The RF Line NPN Silicon Power Transistor 20W, 400MHz, 28V

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封装/外壳：244-04 包装：托盘 描述：TRANS RF NPN 33V 1.1A 244-04 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF POWER TRANSISTOR NPN SILICON

Trans GP BJT NPN 33V 3A 4-Pin Case 244-04

Bipolar

The RF Line NPN Silicon Power Transistor

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The RF Line NPN Silicon Power Transistor

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Socket terminal strip Screw connection

The socket terminal strip 323 is available in 10 mm pitch with 1- to 12-pole design and can be easily stripped to the desired number of poles. The flexible polyamide moulding can even be mounted on curved surfaces. The wire protector of the “HDS”-version reliably prevents damage to multi-wire

TREK 323

PRODUCT HIGHLIGHTS  Response speed control adjusts the speed/noise trade-off of the AC response  Drift/spacing null adjustment minimizes the variation in zero offset voltage as the probe-to-test surface spacing changes  Easy-to-read front panel 3.5 digit LED display  Monitor the detected

Plug-in terminal strip Screw connection & socket with clamping spring

The plug-in terminal strip 323-FB is available in 10 mm pitch with 2 to 12 poles. It has one screw connection per pole and one plug connection for a terminal strip with pins. When using 322-SV plug-in terminal strips, the contact pressure is applied by a stainless-steel spring. The plugging di

Plug-in terminal strip Screw connection & socket with clamping spring, plug-in direction vertical

The plug-in terminal strip 323-FBW is available in 10 mm pitch with 2 to 12 poles. It has one screw connection per pole and one plug connection pointing upwards for the connection of a terminal strip with pins. When using a 322-SVW plug-in terminal strip, the contact pressure is applied by a s

320 Series True-rms Clamp Meters

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