Dual N-channel mTrenchMOS™ ultra low level FET

1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications n Surface mounted package n Footprint 40 smaller than SOT23 n Dual device n Fast switching n Low on-state resistance n Low threshold voltag

Dual N-channel mTrenchMOS ultra low level FET

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Dual N-channel TrenchMOS ultra low level FET

场效应晶体管

20V/-12V N-Channel P-Channel Enhancement Mode MOSFET

Application © Notebook © Load Switch © Networking © Hand-held Instruments

MOS(场效应管)

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DESCRIPTION The GS-R28.0BE is a switch mode constant voltage BATTERY ELIMINATOR that can deliver an output voltage of 7.5 V at 0,75 A of DC output current (Peak output current = 1.8 Ap). Two versions of the INPUT PLUG ADAPTOR are available: WASHER TIP VERSION: GS-R28.0BE-E (Ordering Number) SP

Silicon epitaxial planar type variable resistor

Silicon epitaxial planar type For reduced voltage and temperature compensation ■Features •Extremely small reverse current IR •High reliability with planar structure •Wide forward voltage VFrange

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Description: The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package designed for use in high power, high fidelity audio frequency amplifier applications. Features: • High Power Dissipation: PC = 100W • Collector–Emitter Breakdown Voltage: V(BR)C

2 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 2.0 Amperes)

VOLTAGE 20 to 100 Volts CURRENT 2.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters

General-purpose triggering circuit

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