N-channel TrenchMOS extremely low level FET

1. General description Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and benefits

N-channel TrenchMOS extremely low level FET

N-channel mTrenchMOS extremely low level FET

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N-channel TrenchMOS extremely low level FET

TREK 370

PRODUCT HIGHLIGHTS  Automatic gain control eliminates manual adjustment when changing probes or changing the probe to measured surface separation  One step, push-button zeroing automatically adjusts the output to zero volts when the probe is coupled to a known zero volt surface  Precision

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