丝印代码：F6；N-channel TrenchMOS extremely low level FET

1. General description Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and benefits

N-channel TrenchMOS extremely low level FET

Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

N-channel mTrenchMOS extremely low level FET

文件：90.62 Kbytes Page：12 Pages

N-channel TrenchMOS extremely low level FET

FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 4500 V Mean forward current 485 A Surge current 4 kA

NPN medium frequency transistor

DESCRIPTION NPN medium frequency transistor in a TO-92; SOT54 plastic package. FEATURES • Low current (max. 100 mA) • Low voltage (max. 15 V). APPLICATIONS • IF pre-amplifiers of television receivers.

8-BIT MICROCONTROLLER

文件：638.55 Kbytes Page：43 Pages

RADIO FREQUENCY I DENTIFICATION SYSTEMS

文件：31.16 Kbytes Page：1 Pages

8-BIT MICROCONTROLLER

文件：860.77 Kbytes Page：63 Pages