1. General description

Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

2. Features and benefits

• Low conduction losses due to low on-state resistance

• Low threshold voltage

• Saves PCB space due to small footprint (40 smaller than SOT23)

• Suitable for low gate drive sources

• Surface-mounted package

3. Applications

• Driver circuits

• Switching in portable appliances