丝印代码：AE；40 V, 3 A low VF Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 3 A • Reverse voltage: VR ≤ 4

3 A low VF MEGA Schottky barrier rectifier

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. • Average forward current: IF(AV) ≤ 3 A\n• Reverse voltage: VR ≤ 40 V\n• Low forward voltage\n• High power capability due to clip-bond technology\n• AEC-Q101 qualified\n• Small and flat lead SMD plastic package\n• Capable for reflow and wave soldering;

3 A low VF MEGA Schottky barrier rectifier

3 A low VF MEGA Schottky barrier rectifier

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. • Average forward current: IF(AV) ≤ 3 A\n• Low forward voltage\n• Small and flat lead SMD plastic package\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

丝印代码：AE；40 V, 3 A low VF Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 3 A • Reverse voltage: VR ≤ 4

封装/外壳：SOD-128 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 40V 3A SOD128 分立半导体产品 二极管 - 整流器 - 单

3 A low VF MEGA Schottky barrier rectifier

3 A low VF MEGA Schottky barrier rectifier

3 A low VF MEGA Schottky barrier rectifier

封装/外壳：SOD-128 包装：卷带（TR） 描述：DIODE SCHOTTKY 40V 3A SOD128 分立半导体产品 二极管 - 整流器 - 单

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res