30 V, 0.1 A low VF MEGA Schottky barrier rectifier

1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a DFN0603-2 (SOD972E) leadless ultra small Surface-Mounted Device (SMD) package. 2. Features and benefits • Average forward current I

30 V, 0.1 A low VF MEGA Schottky barrier rectifier

封装/外壳：0201（0603 公制） 包装：卷带（TR） 描述：DIODE SCHOTT 30V 100MA DFN0603-2 分立半导体产品 二极管 - 整流器 - 单

1 Watt - 28 Volts, Class C Microwave 3000 MHz

GENERAL DESCRIPTION The 3001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

KK Maxi-3.96mm & 5.08mm Modular Interconnection System

KEY FEATURES ■ Available on 3.96 mm and 5.08 mm center spacings ■ Polarisation via insertable keys and pegs ■ Allows connections anywhere on the board ■ Double cantilever style terminal ■ Selective gold plating options ■ End-to-end stacking capabilities ■ Locking ramp for improved mated ret

RF Manual 16th edition

MICROWAVE CW BIPOLAR

[ACRIAN INC] GENERAL DESCRIPTION The 3001 is a common base transistor capable of providing 1 Watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed telemetry and telecommunications applications. It uses gold metalization and diffused ballasting to p

KNOB

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