PMDXB600UNE价格
参考价格：￥1.1130
型号：PMDXB600UNE 品牌：NXP Semiconductors 备注：这里有PMDXB600UNE多少钱，2026年最近7天走势，今日出价，今日竞价，PMDXB600UNE批发/采购报价，PMDXB600UNE行情走势销售排行榜，PMDXB600UNE报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PMDXB600UNE | 丝印代码：00；20 V, dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultr | NEXPERIA 安世 |   | |
PMDXB600UNE | 20 V, dual N-channel Trench MOSFET Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Trench MOSFET technology\n• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm\n• Exposed drain pad for excellent thermal conduction\n• ElectroStatic Discharge (ESD) protection > 1 kV HBM\n• Drain-source on-state resistance RDSon = 470 mΩ; | NEXPERIA 安世 | | |
PMDXB600UNE | 20 V, dual N-channel Trench MOSFET | ETC 知名厂家 | ETC | |
20 V, dual N-channel Trench MOSFET Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Low leakage current\n• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm\n• Exposed drain pad for excellent thermal conduction\n• ElectroStatic Discharge (ESD) protection >1kVHBM\n• Drain-source on-state resistance RDSon =470mΩ; | NEXPERIA 安世 | | ||
20 V, dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultr | NEXPERIA 安世 | | ||
20 V, dual N-channel Trench MOSFET 文件：257.2 Kbytes Page：15 Pages | PHILIPS 飞利浦 | | ||
丝印代码：C001；20 V, dual N-channel Trench MOSFET 文件：741.34 Kbytes Page：16 Pages | NEXPERIA 安世 | | ||
HIGH CURRENT PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 6.0 Amperes) VOLTAGE 50 to1000 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • High current capability. • Exceeds environmental standards of MIL-S-19500/228 • Low leakage. • In complia | PANJIT 強茂 | | ||
HIGH CURRENT PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 6.0 Amperes) VOLTAGE 50 to1000 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • High current capability. • Exceeds environmental standards of MIL-S-19500/228 • Low leakage. • In complia | PANJIT 強茂 | | ||
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes) FEATURES • High surge current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • In compliance with EU RoHS 2002/95/EC directives | PANJIT 強茂 | | ||
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes) FEATURES • High surge current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • In compliance with EU RoHS 2002/95/EC directives | PANJIT 強茂 | | ||
HIGH POWER SWITCHING USE NON-INSULATED TYPE HIGH POWER SWITCHING USE NON-INSULATED TYPE • IC Collector current ........................ 600A • VCEX Collector-emitter voltage ........... 350V • hFE DC current gain............................. 500 • Non-Insulated Type APPLICATION Robotics, Forklifts, Welders | MITSUBISHI 三菱电机 | |
PMDXB600UNE产品属性
- 类型
描述
- Package name：
DFN1010B-6
- Product status：
Production
- Channel type：
N
- Nr of transistors：
2
- VDS [max] (V)：
20
- VGS [max] (V)：
8
- RDSon [max] @ VGS = 4.5 V (mΩ)：
620
- RDSon [max] @ VGS = 2.5 V (mΩ)：
850
- integrated gate-source ESD protection diodes：
Y
- VESD HBM (V)：
1000
- Tj [max] (°C)：
150
- ID [max] (A)：
0.6
- QGD [typ] (nC)：
0.1
- QG(tot) [typ] @ VGS = 4.5 V (nC)：
0.4
- Ptot [max] (W)：
0.265
- VGSth [typ] (V)：
0.7
- Automotive qualified：
N
- Ciss [typ] (pF)：
21.3
- Coss [typ] (pF)：
5.4
- Release date：
2013-09-16
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
标准封装 |
37048 |
全新原装正品/价格优惠/质量保障 |
|||
恩XP |
25+ |
DFN6 |
32360 |
NXP/恩智浦全新特价PMDXB600UNE.R7G即刻询购立享优惠#长期有货 |
|||
NEXPERIA |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
HDCD |
25+ |
DIP28 |
35 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
HDCD |
25+ |
DIP28 |
500000 |
行业低价,代理渠道 |
|||
ALLEGRO |
25+ |
QFP |
30000 |
代理全新原装现货,价格优势 |
|||
恩XP |
25+ |
- |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
NEXPERIA/安世 |
24+ |
SOT |
30000 |
NEXPERIA/安世一级代理商 原装进口现货 |
|||
ALLEGRO |
20+ |
QFP-48 |
500 |
样品可出,优势库存欢迎实单 |
|||
POTENS/博盛 |
26+ |
TO252 |
98000 |
原装现货假一罚十 |
PMDXB600UNE规格书下载地址
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2019-8-16
DdatasheetPDF页码索引
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