丝印代码：9C；MOSFET driver

Features * Two transistors and one high-speed switching diode as driver * Totem pole configuration * Application-optimized pinout * Internal connections to minimize layout effort * Space-saving solution * Reduces component count

MOSFET driver

NPN Resistor-Equipped Transistor (RET), NPN general-purpose transistor and high-speed switching diode connected in totem pole configuration in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

MOSFET driver

Low VCEsat (BISS) transistors

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MOSFET driver

封装/外壳：SC-74，SOT-457 包装：卷带（TR） 描述：IC MOSFET DRIVER 6TSOP 分立半导体产品 晶体管 - 特殊用途

High Speed 8-Bit Monolithic A/D Converter

GENERAL DESCRIPTION The AD9002 is an 8-bit, high speed, analog-to-digital converter. The AD9002 is fabricated in an advanced bipolar process that allows operation at sampling rates in excess of 150 megasamples/ second. Functionally, the AD9002 is comprised of 256 parallel comparator stages w

High Speed 8-Bit Monolithic A/D Converter

GENERAL DESCRIPTION The AD9002 is an 8-bit, high speed, analog-to-digital converter. The AD9002 is fabricated in an advanced bipolar process that allows operation at sampling rates in excess of 150 megasamples/ second. Functionally, the AD9002 is comprised of 256 parallel comparator stages w

High Speed 8-Bit Monolithic A/D Converter

GENERAL DESCRIPTION The AD9002 is an 8-bit, high speed, analog-to-digital converter. The AD9002 is fabricated in an advanced bipolar process that allows operation at sampling rates in excess of 150 megasamples/ second. Functionally, the AD9002 is comprised of 256 parallel comparator stages w

High Speed 8-Bit Monolithic A/D Converter

GENERAL DESCRIPTION The AD9002 is an 8-bit, high speed, analog-to-digital converter. The AD9002 is fabricated in an advanced bipolar process that allows operation at sampling rates in excess of 150 megasamples/ second. Functionally, the AD9002 is comprised of 256 parallel comparator stages w

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common source m