Shielded Power Inductors

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封装/外壳：非标准 包装：散装 描述：FIXED IND 1.2UH 21A 4.5 MOHM SMD 电感器，线圈，扼流圈 固定电感器

封装/外壳：非标准 包装：卷带（TR）剪切带（CT） 描述：FIXED IND 670NH 23A 1.4 MOHM SMD 电感器，线圈，扼流圈 固定电感器

Shielded Power Inductors

文件：290.45 Kbytes Page：2 Pages

Shielded Power Inductors

文件：316.93 Kbytes Page：3 Pages

Shielded Power Inductors

文件：316.93 Kbytes Page：3 Pages

Shielded Power Inductors

文件：316.93 Kbytes Page：3 Pages

Shielded Power Inductors

文件：316.93 Kbytes Page：3 Pages

Shielded Power Inductors

文件：316.93 Kbytes Page：3 Pages

Shielded Power Inductors

文件：316.93 Kbytes Page：3 Pages

Shielded Power Inductors

文件：316.93 Kbytes Page：3 Pages

PM1265NL 2 Line Common Mode Choke Surface Mount 20A DCR 4.1 mOhm

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switc

Germanium Mesa Transistor, PNP, for High-Speed Switching Applications

Germanium Mesa Transistor, PNP, for High–Speed Switching Applications

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN Phototransistor

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