Single Pole OptoMOS Relays

Description The PLA191 is a 1-Form-A solid state relay that uses optically coupled relay technology to provide an enhanced 5000V isolation barrier between the input and the output of the relay. The efficient MOSFET switches use Clares patented OptoMOS architecture. The optically coupled input is

Single Pole OptoMOS Relays

Description PLA191 is a single-pole, normally open (1-Form-A) solid state relay that uses optically coupled MOSFET technology to provide 5000Vrms of enhanced input to output isolation. Its optically coupled outputs, which use the patented OptoMOS architecture, are controlled by a highly efficien

Solid State Relays (MOSFET-type)

· Low drive current\n· High reliability\n· Optically Isolated Input and Output\n· No EMI/RFI generation\n· Arc-free with no snubbing circuits\n· Machine insertable, wave solderable\n· AC/DC switching\n· Current Limiting (Parts with \"L\" Suffix)\n· FCC compatible;

封装/外壳：6-DIP（0.300"，7.62mm） 包装：管件 描述：SSR RELAY SPST-NO 250MA 0-400V 继电器 固态继电器

封装/外壳：6-DIP（0.300"，7.62mm） 包装：散装 描述：SSR RELAY SPST-NO 250MA 0-400V 继电器 固态继电器

Single Pole OptoMOS Relays

Description The PLA191 is a 1-Form-A solid state relay that uses optically coupled relay technology to provide an enhanced 5000V isolation barrier between the input and the output of the relay. The efficient MOSFET switches use Clares patented OptoMOS architecture. The optically coupled input is

Single Pole OptoMOS Relays

Description The PLA191 is a 1-Form-A solid state relay that uses optically coupled relay technology to provide an enhanced 5000V isolation barrier between the input and the output of the relay. The efficient MOSFET switches use Clares patented OptoMOS architecture. The optically coupled input is

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ)

PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ)

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ)

Silicon Complementary Transistors High Voltage Video Amplifier

Description: The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high–voltage video and luminance output stages in TV receivers. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA • Low Coll

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE