30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

LV MOSFET

30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM80N03Z uses advanced trench technology and design to provide excellent RDS(ON) with l

N-Channel 30-V (D-S) MOSFET

文件：1.00146 Mbytes Page：7 Pages

Fast Switching Characteristic

文件：82.72 Kbytes Page：7 Pages

Fast Switching Characteristic

文件：82.72 Kbytes Page：7 Pages