30V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V, ID@-2.6A

低压MOSFET (20 - 40V , RDS(ON) < 1Ω)

30V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V, ID@-2.6A

DABiC-IV, 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS

The A6809– and A6810– devices combine 10-bit CMOS shift registers, accompanying data latches and control circuitry with bipolar sourcing outputs and pnp active pull downs. Designed primarily to drive vacuum-fluorescent displays, the 60 V and -40 mA output ratings also allow these devices to be use

DABiC-IV, 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS

The A6809– and A6810– devices combine 10-bit CMOS shift registers, accompanying data latches and control circuitry with bipolar sourcing outputs and pnp active pull downs. Designed primarily to drive vacuum-fluorescent displays, the 60 V and -40 mA output ratings also allow these devices to be use

DABiC-IV, 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS

The A6809– and A6810– devices combine 10-bit CMOS shift registers, accompanying data latches and control circuitry with bipolar sourcing outputs and pnp active pull downs. Designed primarily to drive vacuum-fluorescent displays, the 60 V and -40 mA output ratings also allow these devices to be use

DABiC-IV, 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS

The A6809– and A6810– devices combine 10-bit CMOS shift registers, accompanying data latches and control circuitry with bipolar sourcing outputs and pnp active pull downs. Designed primarily to drive vacuum-fluorescent displays, the 60 V and -40 mA output ratings also allow these devices to be use

Stem actuated valve

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