20V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@4.5V, ID@6.6A

20V N-Channel Enhancement Mode MOSFET

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LV MOSFET

20V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@4.5V, ID@6.6A

20V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@4.5V, ID@6.6A

20V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@4.5V, ID@6.6A

0.56Ω On Resistance High Density Octal SPST Switch

FEATURES ► 0.56Ω typical on resistance ► High continuous current of up to 768mA ► Flat RON across signal range of 0.004Ω ► THD of −127dB at 1kHz ► Route through pins for digital signals and supplies ► Integrated passive components ► SPI with error detection ► Guaranteed break-before-make s

0.56Ω On Resistance High Density Octal SPST Switch

FEATURES ► 0.56Ω typical on resistance ► High continuous current of up to 768mA ► Flat RON across signal range of 0.004Ω ► THD of −127dB at 1kHz ► Route through pins for digital signals and supplies ► Integrated passive components ► SPI with error detection ► Guaranteed break-before-make s

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Standard product AO6414 is Pb-free (meets ROHS & Sony 259 speci

CUSTOMER PRODUCT SPECIFICATION

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30V N-Channel MOSFET

文件：273.85 Kbytes Page：6 Pages