30V Complementary Enhancement Mode MOSFET

Features  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

低压MOSFET (20 - 40V , RDS(ON) < 1Ω)

30V Complementary Enhancement Mode MOSFET

Features  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

N and P-Channel Enhancement Mode Power MOSFET

Description The 4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.9A RDS(ON)

Complementary High Density Trench MOSFET

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N- and P-Channel 30 V (D-S) MOSFET

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Binary reduction valve

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