100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@15A

100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@15A

MOSFET

100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@15A

100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@15A

100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@15A

100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@15A

100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@15A

100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@15A

100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@15A

100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@15A

MOSFET

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4476 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AO4476 is Pb-free (meets ROHS & Sony 259 specifications). Features

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 15 A (VGS = 10V) ● RDS(ON)

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=10.3A,RDS(ON)

HEYbrid™ Brass/Nylon Liquid Tight Cordgrips

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