60V N-Channel Enhancement Mode MOSFET

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中压MOSFET (60 - 200V , RDS(ON) < 1Ω)

60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@10V, ID@8.3A

丝印代码：L9436A1；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@10V, ID@8.3A

中压MOSFET (60 - 200V , RDS(ON) < 1Ω)

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 6.2A, RDS(ON) = 38mΩ @VGS = 10V. RDS(ON) = 52mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 6.2 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

Precision 2.92mm Male to 2.92mm Male Adapter

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N-Channel 30-V (D-S) MOSFET

文件：60.66 Kbytes Page：4 Pages