30VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@20A

30VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@20A

N-Channel30-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC

30VN-ChannelTrenchMOSFET(Preliminary)

Features TrenchPowerTechnology LowRDS(ON) LowGateCharge OptimizedforFast-switchingApplications Applications SynchronousRectificationinDC/DCandAC/DCConverters IsolatedDC/DCConvertersinTelecomandIndustrial

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM90N03QusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)with

N-channel30V-0.005廓-80A-DPAK/IPAKSTripFET??IIIPowerMOSFET

Description ThisdeviceutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitableforthemostdemandingDC-DCconverterapplicationwherehighefficiencyistobeachieved. Generalfeatures ■RDS(on)*Qgindustry’sbenchmark ■Conductionlossesreduce

N-ChannelEnhancementModeFieldEffectTransistor

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