30V N-Channel Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  ESD Protected  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 Package  Ter

LV MOSFET

30V N-Channel Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  ESD Protected  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 Package  Ter

30V N-Channel Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  ESD Protected  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 Package  Ter

小信号MOSFET(Rds(on) > 1Ω)

100 × .100 Latch/Ejector, Straight and Right Angle

• Military (with 3M’s 3518 & N3518 polarizing key) and centerbump polarization • Optional ejector latches • Mounting holes for securing header to board • Optional polarizing posts available • High temperature insulator option suitable for “no lead” soldering operations • High temperature op

3M Pak 100 4-Wall Header

文件：682.27 Kbytes Page：5 Pages

3/8 Square Drive Sockets, SAE

文件：158.63 Kbytes Page：3 Pages

N-Channel 20V (D-S) MOSFET

文件：166.7 Kbytes Page：3 Pages

1.5MHZ, 1A STEP-DOWN DC-DC BUCK CONVERTER

文件：1.0194 Mbytes Page：13 Pages