POWER INTEGRATED CIRCUIT

Semiconductor Devices, Silicon Hybrid Switching Regulators High Reliability Types SCOPE This specification defines the detail requirements for High Reliability Hybrid Switching Regulators. Very extensive 100 testing for parameter stability has been included in the quality Assurance Provisions.

Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types

文件：408.02 Kbytes Page：9 Pages

BJT Modules (Power Integrated Circuit, PIC)

FAST RECOVERY DIODE

FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY Repetitive voltage up to 4500 V Mean forward current 1315 A Surge current 15 kA

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Multi TOPLED

Multi TOPLED® Features ●P-LCC-4 package ●color of package: white ●for use as optical indicator ●for backlighting, optical coupling into light pipes and lenses ●both chips can be controlled separately ●high signal efficiency possible by color change of the LED ●with approp

Multi TOPLED

Multi TOPLED® Features ●P-LCC-4 package ●color of package: white ●for use as optical indicator ●for backlighting, optical coupling into light pipes and lenses ●both chips can be controlled separately ●high signal efficiency possible by color change of the LED ●with approp

DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION

Description The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration. The device integrates two 30 mW Power MOSFET in high-side configuration, and provides gate drive for two external Power MOSFET used as l