TrenchMOS transistor Standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT6N06T in SOT223.

TrenchMOS™ standard level FET

1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT6N06T in SOT223. 1.2 Features 1.3 Applications n Low on-state resistance n Low QGD n Fast switching n Surface mounting package. n DC to DC converte

TrenchMOS™ standard level FET

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

TrenchMOS transistor Standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT6N06T in SOT223.

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC-DC converters and general

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switches for Portable Devices

6A, 60V, RDS(on) 44 m
(ohm) N-Channel Enhancement Mode Power MOSFET

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